|
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| Process characteristics: |
| Material |
|
|---|
| Depth |
0.65 .. 10 µm |
|---|
| Developer Agent that reacts with masking layer (e.g., photoresist) to etch it selectively. |
AZ developer |
|---|
| Etch type |
wet isotropic |
|---|
| Min feature size |
0.5 µm |
|---|
| Resist thickness |
0.65 .. 10 µm |
|---|
| Temperature |
23 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
TEL Mark VII Coater and Developer |
| Equipment characteristics: |
| Batch sizes |
150 mm: 1 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, Corning Eagle 2000, silicon, Corning 1737, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
|---|
MEMS and Nanotechnology Exchange