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Photoresist coat (AZ HiR 1075): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
   Evaporation
   LPCVD
   Low-stress SiN deposition
   Miscellaneous deposition
   Oxidation
   PECVD
   Spin casting
   Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

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Photoresist coat (AZ HiR 1075)
Process characteristics:
Thickness
Thickness*
must be 0.65 .. 1 µm
0.65 .. 1 µm
Material AZ HiR 1075
Sides processed either
Temperature 90 .. 120 °C
Wafer size
Wafer size
Equipment TEL Mark VII Coater and Developer
Equipment characteristics:
Batch sizes 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
fused silica, Corning Eagle 2000, silicon, Corning 1737, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 675 µm