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G-line BCB develop (BCB4000): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
   Anisotropic etch
   Deep RIE
   Isotropic etch
   Miscellaneous etch
   Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
G-line BCB develop (BCB4000)
Batch size 10
Developer
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
DS2100
Duration 90 s
Sides processed either
Wafer size
Wafer size
Equipment MTI BCB coater
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer holder
Device that holds the wafers during processing.
plastic chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, sapphire, quartz (single crystal), silicon germanium, Foturan (Schott), quartz (fused silica), fused silica, ceramic, glass-ceramic, silicon on insulator, alumina, glass (Hoya), silicon on sapphire, Corning 1737, Borofloat (Schott), Pyrex (Corning 7740), silicon carbide
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1100 µm