on front Photoresist ashing II (metal allowed) |
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|
| Ambient Ambient to which substrate is exposed during processing |
oxygen |
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| Batch size |
1 |
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| Material |
photoresist (category) |
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| Power Microwave power radiated into substrates being bonded |
300 W |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 1 |
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| Sides processed |
either |
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| Temperature |
25 °C |
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| Wafer size |
|
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| Equipment |
Plasma Asher |
| Equipment characteristics: |
| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (fused silica), Pyrex (Corning 7740), silicon on insulator, silicon, ceramic |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 800 µm |
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| Comments: |
|
MEMS and Nanotechnology Exchange