10X G-line photolithography (OCG 825 35CS): View

on front 10X G-line photolithography (OCG 825 35CS)

Material	HMDS

on front

Material	OCG 825 35CS

on front

Material	photoresist (category)

on front

on front

Material	OCG 825 35CS

on front

Material	OCG 825 35CS

on front

on front

Process characteristics:

Perform deep uv bake

Resist thickness

Batch size

Feature geometry

Shape of feature with dimensions characterized by the minimum feature size

line

Field geometry

Shape of field with dimensions characterized by the maximum field size

square

Magnification

Material

OCG 825 35CS

Max field size

10 mm

Min feature size

2 µm

Wafer size

Comments:

The UV bake improves the selectivity of resist in dry etch processes generally by 100% as opposed to the conventional hardbake.
See http://www.mems-exchange.org/users/litho-templates for information about layout requirements.