G-line develop (OCG 825 35CS): View

on front G-line develop (OCG 825 35CS)

Developer

Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.

OCG 934

Etch rate

1 µm/min

Material

OCG 825 35CS

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

OCG 825 35CS: 1

Setup time

30 min

Sides processed

either

Temperature

23 °C

Wafer size

Equipment

SVG-8132CTD Develop Track

Equipment characteristics:

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat

Wafer holder

Device that holds the wafers during processing.

vacuum chuck

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 1000 µm