Titanium plasma etch: View

on front Titanium plasma etch

on front

1 Titanium plasma etch

Material	titanium

on front

2 Post-aluminum plasma etch (passivation and strip)

Material	photoresist (category)

Process characteristics:

Depth

Depth of material removed by etch process

0 .. 1 µm

Material

titanium

Selectivity

Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)

photoresist (category): 2, silicon dioxide: 6, titanium: 1

Wafer size

Comments:

If Chamber D of P5000 not available, manual passivation/strip procedure must be performed.