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Aluminum plasma etch: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
   Anisotropic etch
   Deep RIE
   Isotropic etch
   Miscellaneous etch
   Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Aluminum plasma etch
  
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1 Aluminum plasma etch
Materialaluminum
  
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2 Post-aluminum plasma etch (passivation and strip)
Materialphotoresist (category)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Material aluminum
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 aluminum: 1, photoresist (category): 1.5, silicon dioxide: 6
Wafer size
Wafer size
Comments:
  • If Chamber D of P5000 not available, manual passivation/strip procedure must be performed.
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