Ion Milling: View

Ion Milling

Process characteristics:

Depth

0.01 .. 2 µm

Material

Etch type

dry anisotropic

Gas

Argon

Mask materials

Materials that can be used to mask etching.

photoresist (G-line), AZ 5214e, photoresist (I-line) (category), AZ 9245, Futurrex NR5-8000, PMMA, Futurrex NR9-8000, AZ 9260

Wafer size

Equipment

Equipment characteristics:

Batch sizes

100 mm: 3, 150 mm: 3, 75 mm: 3

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

fused silica, silicon carbide, silicon, silicon on insulator, Pyrex (Corning 7740), alumina

Wafer thickness

List or range of wafer thicknesses the tool can accept

200 .. 1000 µm

Comments:

The etch rate varies depending on the material.
Typical rates for common materials are
Silicon nitride ~33nm/min
Silicon dioxide ~33nm/min
gold ~100nm/min