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Develop: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
   Anisotropic etch
   Deep RIE
   Isotropic etch
   Miscellaneous etch
   Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

Develop
Process characteristics:
Depth
Thickness of photoresist.
Depth
Thickness of photoresist.
unconstrained
Material
Photoresist to develop.
Material
Photoresist to develop.
Minimum feature size (masked)
The dimension of the smallest feature in the photoresist to remain on the substrate.
Minimum feature size (masked)
The dimension of the smallest feature in the photoresist to remain on the substrate.
unconstrained
Minimum feature size (open)
The dimension of the smallest feature to be etched in the photoresist.
Minimum feature size (open)
The dimension of the smallest feature to be etched in the photoresist.
unconstrained
Sides processed both
Equipment
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