Process Hierarchy

on front
  ITO lift-off Down
MaterialShipley 1813
  1.1 HMDS Prime
MaterialHMDSThickness1 nm
MaterialShipley 1813
MaterialShipley 1813
on front
  1.5 Contact G-line exposure
Depth10 µm
MaterialShipley 1813
Materialindium tin oxideResidual stress-403.27 MPa
MaterialShipley 1813
Depth100 µm
Process characteristics:
Thickness
Thickness*
must be 0.1 .. 0.2 µm
0.1 .. 0.2 µm
Excluded materials gold (category), copper
Material indium tin oxide
Max field size 100 mm
Min feature size 2 µm
Resist thickness 1.3 µm
Wafer size
Wafer size
Comments:
Extra terms