Process Hierarchy

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  Photoresist develop (Shipley 1813)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 5 µm
0 .. 5 µm
Batch size 25
Agent that reacts with masking layer (e.g., photoresist) to etch it selectively.
Microposit 351
Etch rate 1.5 µm/min
Excluded materials gold (category), copper
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
Field geometry
Shape of field with dimensions characterized by the maximum field size
Material Shipley 1813
Max field size 90 mm
Min feature size 2 µm
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
Shipley 1813: 1
Sides processed either
Temperature 20 °C
Wafer size
Wafer size
Equipment Air Control Microvoid
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
teflon carrier
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon dioxide, Borofloat (Schott), alumina
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
Extra terms