Process Hierarchy

on front
  Contact G-line exposure
Batch size 1
Depth 10 µm
Excluded materials gold (category), copper
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
Field geometry
Shape of field with dimensions characterized by the maximum field size
Intensity of light source
50 mW/cm/cm
Max field size 90 mm
Min feature size 2 µm
Separation of mask and wafer (separation of 0 um indicates contact)
0 µm
Sides processed either
Wavelength of light used during the exposure
405 nm
Wafer size
Wafer size
Equipment Karl Suss MA6
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
vacuum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon dioxide, alumina
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
Extra terms