Indium Tin Oxide (ITO) DC-magnetron sputtering: View
Low-stress SiN deposition
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
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Indium Tin Oxide (ITO) DC-magnetron sputtering
Amount of material added to a wafer
Amount of material added to a wafer, must be 100 .. 2000 Å
100 .. 2000 Å
Ambient to which substrate is exposed during processing
Rate at which material is added to a wafer
gold (category), copper
indium tin oxide
Microwave power radiated into substrates being bonded
Pressure of process chamber during processing
Denton Discovery 24
100 mm: 1, 150 mm: 1
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
alumina, Borofloat (Schott), silicon, silicon dioxide
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
The target is 90% In2O3 / 10% SnO2.
The resistivity of the film 114.1 Ohms/Sq (1650A thickness)
Stress on Si -403.27MPa compressive (1650A)
The film thickness is measured using a glass slide, placed next to the wafer in the deposition chamber. Half of the slide is covered using a Kapton tape.
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.
How to Start