Contact photolithography (front-back align) (Shipley 1813): View

on front Contact photolithography (front-back align) (Shipley 1813)

1 HMDS Prime

Material	HMDS	Thickness	1 nm

on front

2 Photoresist coat (Shipley 1813)

Material	Shipley 1813

3 Photoresist softbake (Shipley 1813)

Material	Shipley 1813

on front

4 Contact front-back alignment

on front

5 Contact G-line exposure

Depth	10 µm

on front

6 Photoresist develop (Shipley 1813)

Material	Shipley 1813

7 Photoresist hardbake (Shipley 1813)

Material	Shipley 1813

Process characteristics:

Perform hard bake

Resist thickness

1.3 .. 2.5 µm

Excluded materials

gold (category), copper

Feature geometry

Shape of feature with dimensions characterized by the minimum feature size

line

Field geometry

Shape of field with dimensions characterized by the maximum field size

circle

Magnification

Material

Shipley 1813

Max field size

90 mm

Min feature size

2 µm

Wafer size

Comments:

See http://www.mems-exchange.org/users/litho-templates for information about layout requirements.

Extra terms

Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.