Process Hierarchy

  Deep boron diffusion with drive-in
  2.1 RCA clean
  2.2 HF dip
Materialboron
  5 HF etch
Materialsilicon dioxide
Process characteristics:
Concentration
Other concentrations are possible but may require characterization
Concentration*
Other concentrations are possible but may require characterization
Diffusion depth
Other depths are possible but may require characterization
Diffusion depth*
Other depths are possible but may require characterization
Batch size 24
Wafer size
Wafer size
Comments:
  • Furnace capable of shallow and deep Boron diffusions using a B2O3 containing solid source.
  • Maximum depth of deep diffusion is 15 um.
  • "Diffusion depth" is the depth at which boron concentration equals the user-requested concentration value.
  • Expect up to 30% loss of wafers for each run.
  • Wafers must have been Pre-Furnace Cleaned immediately prior to diffusion.
  • Other concentrations and diffusion depths may be requested, but will require characterization at additional cost.