Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Boron pre-deposition
Process characteristics:
Concentration
Concentration*
must be 0 .. 4e+20 atom/cc
0 .. 4e+20 atom/cc
Diffusion depth
Diffusion depth*
must be 0 .. 15 µm
0 .. 15 µm
Ambient
Ambient to which substrate is exposed during processing
 nitrogen
Batch size 24
Film grown
Material grown during a process
 borophosphosilicate glass
Material boron
Pressure
Pressure of process chamber during processing
 1 atm
Sides processed both
Temperature 900 .. 1175 °C
Wafer size
Wafer size
Equipment Thermco TMX furnace (A-stack)
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 silicon carbide boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 500 .. 850 µm
Comments:
  • Furnace capable of shallow and deep Boron diffusions using a B2O3 containing solid source.
  • Maximum depth of deep diffusion is 15 um.
  • "Diffusion depth" is the depth at which boron concentration equals the user-requested concentration value.
  • Expect up to 30% loss of wafers for each run.
  • Wafers must have been Pre-Furnace Cleaned immediately prior to diffusion.