Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Boron drive-in
Pressure
Pressure of process chamber during processing
 1 atm
Sides processed both
Temperature 900 .. 1175 °C
Wafer size
Wafer size
Equipment Thermco TMX furnace (A-stack)
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 silicon carbide boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 500 .. 850 µm
Comments:
  • Consistent with a limited-source boron diffusion. Maximum depth of deep diffusion is 15 um. Expect a 10% loss of wafers for each run.
  • Boron predeposition.