on front Contact lithography (Image reversal) |
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| Process characteristics: |
| Alignment tolerance Registration of CAD data to features on wafer |
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| Alignment type Choose fine alignment if the mask will be aligned to the marks on the wafer. |
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| Min feature size |
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| Perform edge bead removal |
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| Perform linewidth metrology Two measurement per wafer |
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| Perform microscope inspection 30 mins inspection per wafer |
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| Perform stylus profilometry One measurement per wafer |
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| Batch size |
1 |
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| Magnification |
1 |
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| Resist thickness |
2.1 µm |
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| Wafer size |
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MEMS and Nanotechnology Exchange