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Forming gas anneal (N2/H2): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
   Anneal
   Bake
   Oxidation
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If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

Forming gas anneal (N2/H2)
1 Piranha/HF clean
1.1 Piranha clean (MOS-clean)
1.2 10:1 HF dip
2 Forming gas anneal (N2/H2)
Process characteristics:
Perform clean
Perform clean*
yes no
Process duration
Running time of the process (excluding setup/shutdown time)
Process duration
Running time of the process (excluding setup/shutdown time), must be 0 .. 4 hour
0 .. 4 hour
Temperature
Maximum temperature the substrate reaches during a process
Temperature*
Maximum temperature the substrate reaches during a process, must be 400 .. 500 °C
400 .. 500 °C
Batch size 24
Excluded materials gold
Wafer size
Wafer size
Comments:
  • Clean will be skipped if anneal immediately follows furnace step at UCB (deposition or oxidation).
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