Forming gas anneal (N2/H2): View

Forming gas anneal (N2/H2)

Process characteristics:

Process duration

Running time of the process (excluding setup/shutdown time)

0 .. 4 hour

Temperature

Maximum temperature the substrate reaches during a process

400 .. 500 °C

Ambient

Ambient to which substrate is exposed during processing

Forming Gas (N2/H2)

Excluded materials

gold

Setup time

60 min

Sides processed

both

Wafer size

Equipment

Equipment characteristics:

Batch sizes

100 mm: 24, 150 mm: 24

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat

Wafer holder

Device that holds the wafers during processing.

quartz boat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 700 µm