Process Hierarchy

  Dry oxidation - Chlorinated
  1 RCA clean
Process characteristics:
Perform clean
Perform clean*
yes no
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.01 .. 0.3 µm
0.01 .. 0.3 µm
Batch size 25
Excluded materials gold (category), copper
Material silicon dioxide
Pressure of process chamber during processing
1 atm
Sides processed both
Wafer size
Wafer size