Process Hierarchy

on front
  Diamond CVD (smooth)
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.5 .. 3 µm
0.5 .. 3 µm
Coeffient of Thermal Expansion (CTE)
@300K 1atm
1.5e-06 1/°C
Deposition rate
Rate at which material is added to a wafer
0.3 µm/hour
Excluded materials gallium arsenide, gold (category), copper
Material diamond
Microstructure polycrystalline
Pressure of process chamber during processing
5 Torr
Resistivity 1e+13 Ω*cm
Sides processed either
Temperature 725 °C
Uniformity -10 .. 10
Young's Modulus 1e+06 .. 1.2e+06 MPa
Wafer size
Wafer size
Equipment Model 650 Hot-Filament Diamond Deposition System
  • Large usable deposition area—350mm by 375mm (14 in. by 15 in. )
Equipment characteristics:
Batch sizes 100 mm: 9, 150 mm: 4, 200 mm: 1, 300 mm: 1
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 2000 µm
  • Very smooth films with grains as small as 100 nm and 20nm Ra roughness can also be grown.