Process Hierarchy

on front
  Aluminum Nitride AC magnetron reactive sputtering
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 1 µm
0 .. 1 µm
Allowed materials silicon nitride, polysilicon, silicon, silicon dioxide, platinum
Ambient to which substrate is exposed during processing
oxygen, argon
Material aluminum nitride
Residual stress -200 .. 200 MPa
Sides processed either
Temperature 400 °C
Wafer size
Wafer size
Equipment AlN Sputterer
  • AC Magnetron Reactive Ion Sputter
Equipment characteristics:
Batch sizes 100 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm