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Contact photolithography (front-front align): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
   Contact mask lithography
   Maskless lithography
   Miscellaneous lithography
   Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368

on front
Contact photolithography (front-front align)
1 Dehydration bake
on front
2 Photoresist spin coat
MaterialShipley 1812Thickness1.5 µm
3 Photoresist softbake
Materialphotoresist (I-line) (category)
on front
4 Contact front-front alignment
on front
5 Contact exposure
6 Photoresist develop
Depth1 .. 10 µmMaterialShipley 1812
Process characteristics:
Material
Material*
Perform dehydration bake
Perform dehydration bake*
yes no
Perform hard bake
Perform hard bake*
yes no
Resist thickness
Resist thickness*
must be 1 .. 10 µm
1 .. 10 µm
Magnification 1
Wafer size
Wafer size
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