ITO lift-off: View

on front ITO lift-off

on front

1 Contact photolithography (front-front align) (Shipley 1813)

Material	Shipley 1813

1.1 HMDS Prime

Material	HMDS	Thickness	1 nm

on front

1.2 Photoresist coat (Shipley 1813)

Material	Shipley 1813

1.3 Photoresist softbake (Shipley 1813)

Material	Shipley 1813

on front

1.4 Contact front-front alignment

on front

1.5 Contact G-line exposure

Depth	10 µm

on front

1.6 Photoresist develop (Shipley 1813)

Material	Shipley 1813

on front

2 Indium Tin Oxide (ITO) DC-magnetron sputtering

Material	indium tin oxide	Residual stress	-403.27 MPa

3 Lift-off etch

Material	Shipley 1813

on front

4 Stylus profilometer step measurement

Depth	100 µm

Process characteristics:

Thickness

0.1 .. 0.2 µm

Excluded materials

gold (category), copper

Material

indium tin oxide

Max field size

100 mm

Min feature size

2 µm

Resist thickness

1.3 µm

Wafer size

Comments:

See http://www.mems-exchange.org/users/litho-templates for information about layout requirements.

Extra terms

Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.