Ion implant: View

on front Ion implant

Process characteristics:

Angle

Incidence angle of implanting ion beam with respect to substrate surface

unconstrained

Dopant type

Species to be implanted

Dose

Number of ions implanted per unit area on substrate.

unconstrained

Energy

Accelerated energy of ions in beam.

unconstrained

Sides processed

either

Equipment

Comments:

The substrate is placed in a vacuum chamber and bombarded by a beam of highly energized ions. The ions penetrate the surface of the substrate and are slowed down by collision with the atoms in the substrate. The penetration depth depends on the energy of the ions on the atom density in the substrate. A thermal anneal is typically performed after implantation to repair the substrate crystal and incorporate the implanted ions.