Process Hierarchy

  Undoped polysilicon LPCVD
  1 RCA1 clean
  2 HF dip
Allowed materialssilicon, silicon nitride, polysilicon, silicon dioxideResidual stress-400 .. -200 MPaUniformity0.025
Deposition rate60 Å/minTemperature565 °C
Process characteristics:
Thickness
Thickness*
must be 0.5 .. 3 µm
0.5 .. 3 µm
Material polysilicon
Wafer size
Wafer size