Process Hierarchy

  Dry oxidation
Process characteristics:
Thickness of grown film.
Thickness of grown film., must be 300 .. 4000 Å
300 .. 4000 Å
Allowed materials silicon, silicon nitride, polysilicon, silicon dioxide
Ambient to which substrate is exposed during processing
oxygen, hydrogen
Growth rate
Rate at which film grows (linear approximation)
40 .. 100 Å/min
Material silicon dioxide
Refractive index 1.46
Sides processed both
Temperature 1000 .. 1100 °C
Uniformity 0.03
Wafer size
Wafer size
Equipment FNA2
Equipment characteristics:
Batch sizes 150 mm: 25
MOS clean yes
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 675 µm