Process Hierarchy

  Wet Thermal Oxidation
Process characteristics:
Thickness of grown film.
Thickness of grown film., must be 0 .. 2 µm
0 .. 2 µm
Ambient to which substrate is exposed during processing
oxygen, hydrogen
Material silicon dioxide
Pressure of process chamber during processing
1 atm
Refractive index 1.45
Sides processed both
Temperature 950 °C
Uniformity -0.07 .. 0.07
Wafer size
Wafer size
Equipment Furnace : Oxide
Equipment characteristics:
Batch sizes 100 mm: 25, 150 mm: 25, 200 mm: 25
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 900 µm