Process Hierarchy

  Dry oxidation
Process characteristics:
Thickness of grown film.
Thickness of grown film., must be 0.01 .. 0.2 µm
0.01 .. 0.2 µm
Allowed materials silicon dioxide, silicon, silicon nitride, polysilicon
Ambient to which substrate is exposed during processing
Growth rate
Rate at which film grows (linear approximation)
10 .. 30 Å/min
Material silicon dioxide
Refractive index 1.46
Sides processed both
Temperature 1050 °C
Uniformity 0.03
Wafer size
Wafer size
Equipment BTI Horizontal Tube Furnace
Equipment characteristics:
Batch sizes 100 mm: 100, 75 mm: 25
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm