on front Titanium DC-magnetron sputtering (Varian) |
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| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
argon |
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| Deposition rate Rate at which material is added to a wafer |
0.0144 µm/min |
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| Material |
titanium |
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| Pressure Pressure of process chamber during processing |
5 mTorr |
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| Sides processed |
either |
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| Wafer size |
|
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| Equipment |
Varian 3190 DC magnetron sputterrer |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 125 mm: 1, 25 mm: 9, 50 mm: 3, 75 mm: 1 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon on insulator, quartz (fused silica) |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
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