Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon dioxide PECVD Down
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  1 Silicon dioxide PECVD
Materialsilicon dioxideResidual stress-165 MPa
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  2 Spectrophotometric film thickness
Thickness100 .. 40000 Å
Process characteristics:
Perform film thickness measurement
Perform film thickness measurement*
yes no
Temperature
Temperature*
must be 200 .. 325 °C
200 .. 325 °C
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.2 .. 8 µm
0.2 .. 8 µm
Material silicon dioxide
Residual stress -195 MPa
Wafer size
Wafer size