Process Hierarchy

on front
  Silicon dioxide PECVD
Process characteristics:
must be 200 .. 325 °C
200 .. 325 °C
0.2 .. 8.0 micron
0.2 .. 8.0 micron, must be 0.2 .. 8 µm
0.2 .. 8 µm
Ambient to which substrate is exposed during processing
helium, nitrogen, nitrous oxide, silane
Deposition rate
Rate at which material is added to a wafer
909 Å/min
Material silicon dioxide
Pressure of process chamber during processing
0.9 Torr
Residual stress -165 MPa
Sides processed either
Wafer size
Wafer size
Equipment Unaxis SLR730
Equipment characteristics:
Batch sizes 100 mm: 3, 125 mm: 3, 50 mm: 3, 75 mm: 3
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
aluminum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
alumina, Borofloat (Schott), ceramic, Corning 1737, fused silica, glass-ceramic, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon on insulator, silicon on sapphire, titanium
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
  • The residual stress was measured on a 2um thick film.