Process Hierarchy

on front
  Dry oxidation
  1.2 10:1 HF dip
Materialsilicon dioxide
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 0.25 µm
0 .. 0.25 µm
Batch sizes 100 mm: 24, 150 mm: 24
Excluded materials gold
Material silicon dioxide
Wafer size
Wafer size