Process Hierarchy

on front
  Stoichiometric silicon nitride LPCVD
  1.2 HCl bath
  1.3 50:1 HF dip
Materialsilicon nitrideResidual stress1000 MPa
Refractive index0 .. 4Thickness0.005 .. 50 µm
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Material silicon nitride
Wafer size
Wafer size
Comments:
  • Wafers must be cleaned differently if they have metal or silicides.