Process Hierarchy

on front
  Low-stress silicon nitride LPCVD ( <120 MPa)
  1.2 HCl bath
  1.3 50:1 HF dip
Materialsilicon nitrideResidual stress50 .. 120 MPa
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Material silicon nitride
Wafer size
Wafer size
Comments:
  • This process is for 4" wafers
    ONLY.
  • Wafers must be cleaned
    differently if they have metal
    or silicides.