Process Hierarchy

on front
  Silicon dioxide PECVD
on front
  1 Silicon dioxide PECVD
Materialsilicon dioxideResidual stress-220 MPa
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Material silicon dioxide
Wafer size
Wafer size