Process Hierarchy

on front
  Silicon dioxide PECVD
on front
  2 Polymer clean-up
Materialpolymer (category)
on front
  3 Silicon dioxide PECVD
Materialsilicon dioxideRefractive index1.44Residual stress-350 MPa
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.01 .. 3.25 µm
0.01 .. 3.25 µm
Material silicon dioxide
Wafer size
Wafer size