Process Hierarchy

  Wet oxidation
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Excluded materials gold
Material silicon dioxide
Measured film thickness variation (+/- %) 6.9
Setup time 60 min
Sides processed both
Temperature 750 .. 1100 °C
Wafer size
Wafer size
Equipment Tylan/Tystar Furnaces (wet oxidation)
Equipment characteristics:
Batch sizes 100 mm: 24, 150 mm: 24, 50 mm: 24
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 700 µm