on front Germanium E-beam evaporation |
|
| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Material |
germanium |
|---|
| Sides processed |
either |
|---|
| Temperature |
25 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
SJ-20 evaporator |
| Equipment characteristics: |
| Batch sizes |
100 mm: 8, 50 mm: 8, 75 mm: 8 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
|---|
| Wafer holder Device that holds the wafers during processing. |
rotating orbital |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
gallium arsenide, glass (category), indium phosphide, Pyrex (Corning 7740), quartz (fused silica), silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
