Process Hierarchy

  Dry/wet/dry oxidation
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.1 .. 2 µm
0.1 .. 2 µm
Ambient to which substrate is exposed during processing
hydrogen, oxygen
Batch size 45
Excluded materials gold (category), copper
Growth rate
Rate at which film grows (linear approximation)
3.3 .. 4.5 nm/min
Loading effects
Free form text field for description of loading effects (e.g. bullseye)
Material silicon dioxide
Measured film thickness variation (+/- %) 2.6
Pressure of process chamber during processing
1 atm
Sides processed both
Temperature 950 .. 1075 °C
Wafer size
Wafer size
Equipment MRL furnace 322-2
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
  • Wafers must be RCA cleaned within 24 hours of loading,or transferred directly from another furnace.
  • Standard CWRU wet oxidation. 5 min dry oxidation on either side of a variable time wet oxidation.
Extra terms