Process Hierarchy

  Wet oxidation (metal)
Process characteristics:
Thickness of grown film.
Thickness of grown film., must be 0 .. 2 µm
0 .. 2 µm
Ambient to which substrate is exposed during processing
Batch size 25
Material silicon dioxide
Pressure of process chamber during processing
1 atm
Sides processed both
Temperature 1100 °C
Wafer size
Wafer size
Equipment Tylan Furnace (Silicide, Tube #7)
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator, silicon on sapphire
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • Use when metal residues of aluminum, titanium, and tungsten in silicide form are present on wafers.
  • Standard pre-diffusion clean at diffusion wet bench.
  • Prices listed for 1100 degC oxidation temperature. Lower temperatures available upon request at higher cost.