Silicon dioxide CMP: View

on front Silicon dioxide CMP

Process characteristics:

Thickness removed

Amount of material removed

0.05 .. 8 µm

Material

silicon dioxide

Pad pressure

Pressure exerted by the pad on the front (polished side) of the wafer

2 .. 8 psi

Removal rate

Rate at which material is removed

4000 Å/min

Sides processed

either

Uniformity

0.04

Wafer size

Equipment

Equipment characteristics:

Batch sizes

150 mm: 1

Wafer geometry

Types of wafers this equipment can accept

1-flat, 2-flat, notched, no-flat

Wafer materials

List of wafer materials this tool can accept (not list of all materials, just the wafer itself).

silicon on insulator, silicon

Wafer thickness

List or range of wafer thicknesses the tool can accept

300 .. 700 µm

Comments: