Process Hierarchy

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  Indium Tin Oxide (ITO) deposition
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 1 µm
0 .. 1 µm
Batch size 1
Material indium tin oxide
Sides processed either
Wafer size
Wafer size
Equipment Sputter tool
  • 125mm, 156mm pseudosquare substrates are ok.
    300mm square substrates are ok as well.
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer thickness
List or range of wafer thicknesses the tool can accept
150 .. 1000 µm
Comments:
  • Composition:
    90 wt% In2O3 10 wt% SnO2
Attachments
[Thumbnail]ITO_resistance.png (28.3 KB, image/png)
attached by ozgur (Mehmet Ozgur) on 2010-08-06 10:38
ITO electrical sheet resistance
[Thumbnail]ITO_transmittence.png (42.2 KB, image/png)
attached by ozgur (Mehmet Ozgur) on 2010-08-06 10:38
ITO optical transmittance