Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact photolithography (SU-8)
  1 Dehydration bake
on front
  2 Spin casting manual spinner (SU-8)
  3 Manual Photoresist Softbake (hotplate)
  4 Contact flat alignment and exposure
  5 Manual Photoresist post-exposure bake (hotplate)
  6 SU-8 develop
  7 Linewidth Microscope Measurement
Process characteristics:
Alignment side
Alignment side*
Alignment tolerance
Registration of CAD data to features on wafer
Alignment tolerance*
Registration of CAD data to features on wafer
unconstrained
Alignment type
Choose fine alignment if the mask will be aligned to the marks on the wafer.
Alignment type*
Choose fine alignment if the mask will be aligned to the marks on the wafer.
Perform hardbake
Hardbake 150-200C will fully crosslink the epoxy making it very difficult to remove.
Perform hardbake*
Hardbake 150-200C will fully crosslink the epoxy making it very difficult to remove.
Perform linewidth metrology
Two measurement per wafer
Perform linewidth metrology*
yes no
Two measurement per wafer
Perform microscope inspection
30 mins inspection per wafer
Perform microscope inspection*
yes no
30 mins inspection per wafer
Perform stylus profilometry
One measurement per wafer
Perform stylus profilometry*
yes no
One measurement per wafer
Resist thickness
Resist thickness*
must be 10 .. 200 µm
10 .. 200 µm
Batch size 1
Magnification 1
Materials SU-8
Min feature size 30 µm
Wafer size
Wafer size