Process Hierarchy

  Platinized silicon wafer (SiO2/TiOx/Pt)
Process characteristics:
Silicon dioxide thickness
Oxide thickness
Silicon dioxide thickness*
Oxide thickness
Thickness
Platinum thickness only.
(SiO2= 300nm (preferred)0.5um or 1.0um available with additional leadtime) (TiOx=20nm will remain fixed)
Thickness*
Platinum thickness only. (SiO2= 300nm (preferred)0.5um or 1.0um available with additional leadtime) (TiOx=20nm will remain fixed)
Batch size 1
Material platinum
Comments:
  • 150mm Silicon Substrates ready for PZT or other specialty film depositions. The wafers include the following films:
  • Pt Layer: (sputter deposited)
    --------------
    Thickness = 100 nm ± 20 nm OR 200 nm ± 20 nm
    Sheet Resistance < 2 Ohm/sq
    Orientation = <111> normal to substrate surface
    111 Rocking Curve FWHM < 5 degrees theta (CuKalpha radiation)
  • TiO2 Layer: (sputter deposited and high-temperature furnace annealed)
    --------------
    Orientation = <200>
    Thickness = 32 nm .. 35nm
  • SiO2 Layer: (thermal oxidation)
    --------------
    Thickness = 300 nm ± 20 nm (preferred) Or
    500 nm ± 30 nm (longer leadtime) OR
    1000 nm ± 50 nm (longer leadtime)
  • Si Substrate:
    --------------
    Prime wafer
    Diameter = 150 mm,
    Flat = Semi-standard,
    Thickness = 625-675 microns
    Resistivity = 1-30 Ohm-cm
    Orientation = <100>