Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  TEOS PECVD
Process characteristics:
Thickness
Thickness*
must be 0.04 .. 2 µm
0.04 .. 2 µm
Material silicon dioxide
Sides processed either
Temperature 300 .. 400 °C
Wafer size
Wafer size
Equipment PECVD tool #1
  • Call for 300mm
Equipment characteristics:
Batch sizes 100 mm: 25, 150 mm: 25, 200 mm: 25
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 quartz (fused silica), silicon, Pyrex (Corning 7740), quartz (single crystal), silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm