Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Sputtered Metal Film
  1 Cr, Ti Single Layer Sputter
  2 Al, Al.5%Cu, Cu Single Layer Sputter
Process characteristics:
Layer 1 Material
First material to be deposited in the module. This will form the bottom layer in the film stack.
Layer 1 Material*
First material to be deposited in the module. This will form the bottom layer in the film stack.
Layer 1 Thickness
Layers of Ti or Cr have a maximum thickness of 5000 Angstroms.
Layer 1 Thickness*
Layers of Ti or Cr have a maximum thickness of 5000 Angstroms., must be 250 .. 15000 Å
250 .. 15000 Å
Layer 2 Material
The second deposited material
Layer 2 Material
The second deposited material
Layer 2 Thickness
Layer 2 Thickness
must be 250 .. 15000 Å
250 .. 15000 Å
Layer 3 Material
The third deposited material
Layer 3 Material
The third deposited material
Layer 3 Thickness
Layers of Ti or Cr have a maximum thickness of 5000 Angstroms
Layer 3 Thickness
Layers of Ti or Cr have a maximum thickness of 5000 Angstroms, must be 250 .. 15000 Å
250 .. 15000 Å
Layer 4 Material
The fourth deposited material
Layer 4 Material
The fourth deposited material
Layer 4 Thickness
Layer 4 Thickness
must be 250 .. 15000 Å
250 .. 15000 Å
Batch size 25
Wafer size
Wafer size