Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Doped poly-SiC LPCVD
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 0.5 µm
0 .. 0.5 µm
Deposition rate
Rate at which material is added to a wafer
 30 .. 60 nm/min
Excluded materials gold, aluminum
Material poly-SiC
Pressure
Pressure of process chamber during processing
 170 mTorr
Resistivity 0.025 .. 0.035 Ω*cm
Sides processed both
Temperature 800 °C
Wafer size
Wafer size
Equipment Tylan/Tystar Furnaces (SiC tube)
Equipment characteristics:
Batch sizes 100 mm: 24, 150 mm: 10
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 700 µm
Comments:
  • N doped.
  • All metals, except refractory metals with melting point above 1500C excluded.